A simple derivation of field-effect transistor characteristics
نویسندگان
چکیده
منابع مشابه
Improved drain current characteristics of tunnel field effect transistor with heterodielectric stacked structure
In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...
متن کاملSimulation study of the performance of a biologically sensitive field effect transistor
The transformation of biochemical information into a physical or chemical signal is the basic idea behind a biosensor. The efficient detection of charged biomolecules by biosensor with appropriate device has caught tremendous research interest in the present decade. The present work is related to the simulation study of the performance of a functionalized surface of a biologically sensitive fie...
متن کاملSimulation study of the performance of a biologically sensitive field effect transistor
The transformation of biochemical information into a physical or chemical signal is the basic idea behind a biosensor. The efficient detection of charged biomolecules by biosensor with appropriate device has caught tremendous research interest in the present decade. The present work is related to the simulation study of the performance of a functionalized surface of a biologically sensitive fie...
متن کاملSIMPLE DERIVATION OF FRANCK-CONDON INTEGRALS
The expressions foavibrational overlap integrals of the one-dimensional harmonic wavefunctions (centenxi about different equilibrium positions and having different frequencies) have been derived in a simple and straightforward way.
متن کاملJunction Field Effect Transistor (JFET)
The single channel junction field-effect transistor (JFET) is probably the simplest transistor available. As shown in the schematics below (Figure 6.13 in your text) for the n-channel JFET (left) and the p-channel JFET (right), these devices are simply an area of doped silicon with two diffusions of the opposite doping. Please be aware that the schematics presented are for illustrative purposes...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Proceedings of the IEEE
سال: 1963
ISSN: 0018-9219
DOI: 10.1109/proc.1963.2458